Jig for forming end surface protecting film of semiconductor laser
文献类型：专利
| 作者 | SHIMADA KATSUTO |
| 发表日期 | 1989-03-02 |
| 专利号 | JP1989055891A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Jig for forming end surface protecting film of semiconductor laser |
| 英文摘要 | PURPOSE:To prevent falling of a bar-shaped semiconductor laser from a jig for forming the end-surface protecting film of the semiconductor laser and to prevent the formation of the protecting film on the entire surface of the electrode of the semiconductor laser, by attaching a spacer between the bar- shaped semiconductor laser and a cover. CONSTITUTION:A bar-shaped semiconductor laser 103 is coupled into the groove part of a base 101 so that an active layer 104 is positioned at the upper side. A spacer 107 comprising single crystal silicon is coupled from the upper side and fixed with a cover 102. A part of an electrode 105 is exposed from the spacer 107. The upper part of the groove is widely formed so that an evaporating agent for protection is sufficiently applied to an end surface 106 of a resonator. In this way, the upper side of the bar-shaped semiconductor laser 103 is pushed with the spacer 107, which is slightly narrower than the width of the bar-shaped semiconductor laser, and the spacer 107 is fixed with the groove at both end parts of the base 10 Therefore, the bar-shaped semiconductor laser 103 does not fall out of the jig, and the protecting film is not formed on the entire surface of the electrode 105. |
| 公开日期 | 1989-03-02 |
| 申请日期 | 1987-08-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63102]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | SHIMADA KATSUTO. Jig for forming end surface protecting film of semiconductor laser. JP1989055891A. 1989-03-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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