Surface emission semiconductor laser with monitor
文献类型：专利
| 作者 | SAITO HIDEHO |
| 发表日期 | 1989-03-29 |
| 专利号 | JP1989084687A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emission semiconductor laser with monitor |
| 英文摘要 | PURPOSE:To enable a semiconductor laser with monitor to be easily coupled to any optical fibers, by employing a specific structure in which a separating trench is formed with the sidewall thereof on the side of a monitor section in a slope-shape, and the emitted laser beam from a laser section is reflected by the sloped sidewall of the trench to be output. CONSTITUTION:A laser section 8 having a stripe-shaped current injecting region 5, and a monitor section 9 are together monolithically integrated in the same substrate 1, with the laser section 8 and the monitor section 9 being electrically separated each other. A trench 10 for separation is formed with the sidewall 11 on the side of the laser section perpendicular to a p-n junction while the trench being formed with the sidewall 12 on the side of the monitor section inclined at 40-50 deg. to the p-n junction. As a result, the emitted laser beam 14 from the laser section 8 is reflected by the sloped sidewall 12 on the side of the monitor, and thus the reflected laser beam 14 is emitted outward with being perpendicular to the p-n junction, thereby the semiconductor laser with monitor can be easily coupled to any optical fibers. Moreover, since a reflecting film 16 with high reflectance is formed on the far-end surface, the threshold current of the laser can be effectively reduced. |
| 公开日期 | 1989-03-29 |
| 申请日期 | 1987-09-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63108]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | SAITO HIDEHO. Surface emission semiconductor laser with monitor. JP1989084687A. 1989-03-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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