Variable wavelength type semiconductor laser
文献类型：专利
| 作者 | KOBAYASHI TAKAO; INOUE TOKUO |
| 发表日期 | 1989-07-10 |
| 专利号 | JP1989173686A |
| 著作权人 | OMRON TATEISI ELECTRON CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Variable wavelength type semiconductor laser |
| 英文摘要 | PURPOSE:To modulate a temperature at high speed by a method wherein a heat-generating part used to control a temperature at an active layer is formed in a position adjacent to the active layer causing a laser oscillation and an electrode used to apply electricity to this heat-generating part is formed on the surface of a semiconductor laser. CONSTITUTION:A heat-generating part used to control a temperature at an active layer 15 is formed in a position adjacent to the active layer 15 which is situated inside a semiconductor laser and which causes a laser oscillation; an electrode 22 used to apply electricity to this heat-generating part is formed on the surface of the semiconductor laser. Accordingly, the heat-generating part is situated near the active layer 15; the heat-generating part is only one part of the semiconductor laser; it is not required to control the temperature of a whole part; a thermal time constant of a temperature control operation inside the semiconductor laser is shortened extremely. By this setup, the temperature can be modulated at high speed. |
| 公开日期 | 1989-07-10 |
| 申请日期 | 1987-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63128]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRON CO |
| 推荐引用方式 GB/T 7714 | KOBAYASHI TAKAO,INOUE TOKUO. Variable wavelength type semiconductor laser. JP1989173686A. 1989-07-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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