Selective buried growth of group iii-v compound semiconductor
文献类型：专利
| 作者 | KATOU YOSHITAKE |
| 发表日期 | 1989-07-12 |
| 专利号 | JP1989175727K1 |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Selective buried growth of group iii-v compound semiconductor |
| 英文摘要 | PURPOSE:To realize a manufacturing method which facilitates formation of a semiconductor integrated device in which elements are isolated by high resistance semiconductor and makes the surface of the device smooth by providing at least a process wherein a mixture of a semiconductor building-up atmosphere and a halide gas atmosphere is formed in the upstream side of a substrate and the semiconductor building-up is carried out. CONSTITUTION:In order to build up III-V compound semiconductor in trench parts provided on a semiconductor substrate by an organic metal vapor growth method, at least a process wherein a mixture of a semiconductor building-up atmosphere and a halide gas atmosphere is formed in the upstream side of the substrate and the compound semiconductor is built up is provided. For instance, a DH crystal in which trenches are formed at current blocking parts 207 of a laser and a coupling part 208 with an SiO2 film 206 as an etching mask is placed on a carbon susceptor 116 in an MOCVD apparatus and its temperature is elevated by a radio frequency induction coil 114. Then In(CH3)3 and Fe(C2H5)2 are supplied with H2 from a gas inlet 111, PH3 is supplied with H2 from a gas inlet 112 and HCl is supplied with H2 from a gas inlet 113 to build up Fe doped InP selectively. |
| 公开日期 | 1989-07-12 |
| 申请日期 | 1987-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63129]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KATOU YOSHITAKE. Selective buried growth of group iii-v compound semiconductor. JP1989175727K1. 1989-07-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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