Wiring structure of integrated bistable semiconductor laser
文献类型：专利
| 作者 | IWAMA TAKEO |
| 发表日期 | 1989-08-02 |
| 专利号 | JP1989192185A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Wiring structure of integrated bistable semiconductor laser |
| 英文摘要 | PURPOSE:To prevent a cross talk and miniaturize a device by a method wherein two or more bistable semiconductor lasers are structured into one piece such as to have their electrodes positioned on the same plane, and the electrodes and the wiring electrodes are electrically and mechanically connected with each other. CONSTITUTION:Two or more bistable semiconductor lasers 1 are structured into one piece such as to make their electrodes 2 positioned on the same plane, a substrate 4 provided with wiring electrodes 3 which are situated at the position corresponding to the electrodes 2 is made to face toward the bistable semiconductor laser 1, and the electrodes 2 and the wiring electrodes 3 are electrically and mechanically connected with each other through a flip chip bonding. The reason that electrodes of a bistable semiconductor lasers are arranged on the same plane is that a monolithic structure can be easily attained with the directions in which laser rays are inputted or outputted or the directions of the active layers being in parallel with each other. By these processes, for instance, the processing of optical signals in parallel is made possible in a time division light exchange system. And, as electrodes are positioned on the same plane, the flip chip bonding of the electrodes with the wiring electrodes of a substrate can be facilitated. |
| 公开日期 | 1989-08-02 |
| 申请日期 | 1988-01-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63136]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | IWAMA TAKEO. Wiring structure of integrated bistable semiconductor laser. JP1989192185A. 1989-08-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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