Semiconductor laser beam source
文献类型：专利
| 作者 | AOYAMA SHIGERU; OGATA SHIRO; INOUE TOKUO; YAMASHITA MAKI |
| 发表日期 | 1989-08-18 |
| 专利号 | JP1989206682A |
| 著作权人 | OMRON TATEISI ELECTRON CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser beam source |
| 英文摘要 | PURPOSE:To make the fluctuation of projecting laser rays in a projecting angle due to a temperature change as small as possible by a method wherein an unequally spaced diffraction grating is composed of a material which has such a thermal expansion coefficient that the fluctuation of a projecting angle can be almost compensated for with the change of the unequally spaced diffraction grating in a focal length due to a temperature change. CONSTITUTION:A semiconductor laser diode chip (LD chip) 1 is fixed to a heat sink 3, and a transparent substrate provided with a Fresnel lens 2 is disposed in front of the LD chip A material forming the Fresnel lens 2 expands or contracts with the change of temperature T. When the lens material expands thermally due to the rise of a temperature T, the period of a lens pattern increases, and consequently the focal length of the Fresnel lens 2 grows larger. Therefore, the fluctuations of the focal length of the Fresnel lens 2 due to the change of an oscillating wavelength of the LD chip 1 caused by a temperature change and due to the thermal expansion and contraction of the lens material are made to act cancelling each other. By these processes, a projecting laser beam can be prevented from fluctuating in a projecting angle. |
| 公开日期 | 1989-08-18 |
| 申请日期 | 1988-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63139]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRON CO |
| 推荐引用方式 GB/T 7714 | AOYAMA SHIGERU,OGATA SHIRO,INOUE TOKUO,et al. Semiconductor laser beam source. JP1989206682A. 1989-08-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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