Semiconductor laser apparatus and method of driving same
文献类型：专利
| 作者 | ISHIKAWA MAKOTO; KATAYAMA RYUICHI; YUASA TSUNAO |
| 发表日期 | 1989-10-06 |
| 专利号 | JP1989251775A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser apparatus and method of driving same |
| 英文摘要 | PURPOSE:To realize a high-output and low-noise characteristic which is optimum as a light source of an addition-record and rewrite type optical disk or the like even without using a high-frequency superposed circuit by a method wherein a switch used to connect a second conductivity type electrode layer in an absorption region to a first conductivity type semiconductor substrate is installed and an excitation region is coupled optically to the absorption region. CONSTITUTION:While an absorption region 11 and an excitation region 12 are kept optically coupled by means of an electrode-separating groove 13, a semiconductor laminate structure is separated electrically into the absorption region 11 and the excitation region 12; a switch 14 which connects a second conductivity type electrode layer in the absorption region to a first conductivity type semiconductor substrate directly or via a resistance in accordance with a control signal supplied from the outside is installed. When the changeover switch 14 is connected to B, the absorption region 11 is grounded and this absorption region 11 functions as an oversaturation absorber; accordingly, a self-oscillation is generated and a low-noise characteristic can be obtained. On the other hand, when the changeover switch 14 is connected to A, a carrier is injected also to the absorption region 11 in the same manner as in the excitation region 12, and a high-output characteristic can be obtained. Accordingly, when the switch 14 is changed over in synchronization with a changeover operation between a drive voltage V2 at a high output and a drive voltage V1 at a low output, a low-noise oscillation and a high-output oscillation can be obtained alternately. |
| 公开日期 | 1989-10-06 |
| 申请日期 | 1988-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63150]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | ISHIKAWA MAKOTO,KATAYAMA RYUICHI,YUASA TSUNAO. Semiconductor laser apparatus and method of driving same. JP1989251775A. 1989-10-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。