Formation of lead/tin solder layer
文献类型：专利
| 作者 | ANDO SHINJI |
| 发表日期 | 1989-11-07 |
| 专利号 | JP1989276648A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of lead/tin solder layer |
| 英文摘要 | PURPOSE:To simplify the manufacturing process of a solder layer and improve the strength of die bonding, by using a plating liquid whose main components are hydroborofluoric acid, lead borofluoride, and tin borofluoride in an electric plating technique and by making its liquid have a specific plating current density. CONSTITUTION:Lead/tin solder is formed partially only on the metallic electrode of an n-type GaAs substrate. Then, electro-plating is performed with a plating liquid which has hydroborofluoride acid [HBF4], lead borofluoride [Pb(BF4)2], tin borofluoride [Sn(BF4)2] as its main ingredients and its liquid has a plating current density: 2.6+ or -0.8mA/cm. In this way, a lead/tin plating layer is formed selectively only on the metallic electrode even with respect to the GaAs substrate where no patterning by photolithography is performed. Thus, this approach makes it possible to obtain a soldered layer which is easily manufactured and is superior in die bonding strength. |
| 公开日期 | 1989-11-07 |
| 申请日期 | 1988-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63152]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ANDO SHINJI. Formation of lead/tin solder layer. JP1989276648A. 1989-11-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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