Surface emitting type semiconductor laser
文献类型：专利
| 作者 | UOMI, KAZUHISA HITACHI KOYASUDAI APARTMENT D-401; TSUJI, SHINJI; OKAI, MAKOTO; SAKANO, SHINJI; CHINONE, NAOKI |
| 发表日期 | 1989-04-05 |
| 专利号 | EP0310038A2 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emitting type semiconductor laser |
| 英文摘要 | A surface emitting laser diode having a two-dimensionally extended light emitting region is disclosed in which the light emitting region includes a plurality of stripe regions (I) and gap regions (II) each formed between adjacent stripe regions, the stripe regions are optically coupled with each other through the gap regions, and an even-order diffraction grating (19, 29, 39, 49) is formed in at least a part of the light emitting area. The laser diode having the above structure can emit a high-intensity, well-collimated laser beam. |
| 公开日期 | 1989-04-05 |
| 申请日期 | 1988-09-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63177]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | UOMI, KAZUHISA HITACHI KOYASUDAI APARTMENT D-401,TSUJI, SHINJI,OKAI, MAKOTO,et al. Surface emitting type semiconductor laser. EP0310038A2. 1989-04-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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