Submount and optical semiconductor device
文献类型：专利
| 作者 | TSUNEKANE MASAKI |
| 发表日期 | 1990-05-25 |
| 专利号 | JP1990137389A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Submount and optical semiconductor device |
| 英文摘要 | PURPOSE:To prevent a brazing material from being swollen at a part directly under a light-emitting point and to prevent a radiated beam from the light- emitting point from being scattered by a method wherein a belt-shaped thin-film brazing material whose width is identical to or smaller than an element length of an optical semiconductor element to be melted and bonded is formed on a metallized layer. CONSTITUTION:Si is used as a material for a submount 2; metallized layers 7, 8 of Ti/Pt/Au are formed on the surface, the rear surface and one side face. A PbSn film as a brazing material 13 is formed on the whole rear surface of the metallized layer 9; a brazing material 12 composed of an Sn film is formed on the surface along the side where the metallized layer 7 has been formed. Thereby, since pushed-out Sn is not swollen and is spread to the outside along the metallized layer 7 of the submount directly under a light-emitting point 11b, it is possible to efficiently utilize a radiated beam without blocking the light-emitting point. |
| 公开日期 | 1990-05-25 |
| 申请日期 | 1988-11-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63187]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | TSUNEKANE MASAKI. Submount and optical semiconductor device. JP1990137389A. 1990-05-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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