Manufacture of wavelength stabilized semiconductor laser
文献类型：专利
| 作者 | MIYAZAKI KEISUKE |
| 发表日期 | 1990-10-12 |
| 专利号 | JP1990253679A |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of wavelength stabilized semiconductor laser |
| 英文摘要 | PURPOSE:To suppress a thermal stress and improve the accuracy of a distance between a resonance surfaces by a method wherein the laser beam emitting plane of a semiconductor laser chip (LD chip) and the reflective surface of a mirror plane are brought into contact with each other and then the relative position between the LD chip and the mirror chip is fixed with a predetermined distance while parallelism between those planes are maintained and, in that state, they are die-bonded to die-bonding planes simultaneously. CONSTITUTION:As an LD chip 2 and a mirror chip 3 are attracted by separate collets individually, both the chips 2 and 3 can be transferred onto die-bonding planes 1 and die-bonded in one die-bonding process simultaneously. If they are die-bonded simultaneously, a time for one die-bonding process is necessary and a thermal stress applied to the LD chip 2 is suppressed from the stress of two die-bonding process in the conventional constitution to the stress of one process. Further, the laser beam emitting plane of the LD chip 2 and the mirror plane of the mirror chip 3 are brought into contact with each other before the die- bonding and, after a parallelism between those planes is obtained, they are die-bonded while their relative position is fixed to a predetermined distance. With this constitution, the accuracy of a distance between the resonance surfaces of an external resonator composed of those two planes can be improved. |
| 公开日期 | 1990-10-12 |
| 申请日期 | 1989-03-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63211]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | MIYAZAKI KEISUKE. Manufacture of wavelength stabilized semiconductor laser. JP1990253679A. 1990-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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