Vcsel
文献类型：专利
| 作者 | VICTORIA, BROADLEY; JENNIFER, MARY, BARNES |
| 发表日期 | 2005-04-27 |
| 专利号 | GB2407434A |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Vcsel |
| 英文摘要 | A first wet chemical etch process using a sulphuric acid/hydrogen peroxide/ water solution is used to etch a GaAs capping layer 5 and an AlGaAs cladding layer 4, an AlGaInP active layer acts as an etch stopping layer to control the etch depth. A second wet chemical etch process using an ammonia/hydrogen peroxide/water solution is used to selectively etch the sidewall of the GaAs capping layer. The two-stage etching process allows the width of the capping layer to be controlled to be the same as or less than the underlying cladding layer, and where the vertical angle r 2 of the capping layer is less than the vertical angle r 1 of the cladding layer. VCSELs with continuous sidewalls between the cladding and capping layers can thereby be manufactured. |
| 公开日期 | 2005-04-27 |
| 申请日期 | 2003-10-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63329]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | VICTORIA, BROADLEY,JENNIFER, MARY, BARNES. Vcsel. GB2407434A. 2005-04-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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