Single mode vertical cavity surface emitting laser using photonic crystals with a central defect
文献类型:专利
作者 | LIPSON, JAN; LENOSKY, THOMAS; DENG, HONGYU |
发表日期 | 2005-01-13 |
专利号 | US20050008060A1 |
著作权人 | LIPSON JAN |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Single mode vertical cavity surface emitting laser using photonic crystals with a central defect |
英文摘要 | Vertical cavity surface emitting lasers are disclosed, one example of which includes a substrate upon which a lower mirror layer is formed. An active region and upper mirror layer are disposed, in that order, on the lower mirror layer. In particular, the upper mirror layer includes a plurality of DBR layers formed on the active region. The upper mirror layer additionally includes a photonic crystal formed on the plurality of DBR layers and having a periodic structure that contributes to the definition of a central defect. As a consequence of this structure, the photonic crystal has a reflectivity that is wavelength dependent, and the central defect enables the VCSEL to propagate a single mode. |
公开日期 | 2005-01-13 |
申请日期 | 2004-08-06 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/63368] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | LIPSON JAN |
推荐引用方式 GB/T 7714 | LIPSON, JAN,LENOSKY, THOMAS,DENG, HONGYU. Single mode vertical cavity surface emitting laser using photonic crystals with a central defect. US20050008060A1. 2005-01-13. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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