中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Single mode vertical cavity surface emitting laser using photonic crystals with a central defect

文献类型:专利

作者LIPSON, JAN; LENOSKY, THOMAS; DENG, HONGYU
发表日期2005-01-13
专利号US20050008060A1
著作权人LIPSON JAN
国家美国
文献子类发明申请
其他题名Single mode vertical cavity surface emitting laser using photonic crystals with a central defect
英文摘要Vertical cavity surface emitting lasers are disclosed, one example of which includes a substrate upon which a lower mirror layer is formed. An active region and upper mirror layer are disposed, in that order, on the lower mirror layer. In particular, the upper mirror layer includes a plurality of DBR layers formed on the active region. The upper mirror layer additionally includes a photonic crystal formed on the plurality of DBR layers and having a periodic structure that contributes to the definition of a central defect. As a consequence of this structure, the photonic crystal has a reflectivity that is wavelength dependent, and the central defect enables the VCSEL to propagate a single mode.
公开日期2005-01-13
申请日期2004-08-06
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/63368]  
专题半导体激光器专利数据库
作者单位LIPSON JAN
推荐引用方式
GB/T 7714
LIPSON, JAN,LENOSKY, THOMAS,DENG, HONGYU. Single mode vertical cavity surface emitting laser using photonic crystals with a central defect. US20050008060A1. 2005-01-13.

入库方式: OAI收割

来源:西安光学精密机械研究所

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