Vcsel with gain tailoring by apertures with different diameters in the bottom p-dbr
文献类型：专利
| 作者 | GRONENBORN, STEPHAN; MOENCH, HOLGER |
| 发表日期 | 2013-01-31 |
| 专利号 | WO2013014563A1 |
| 著作权人 | KONINKLIJKE PHILIPS N.V. |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Vcsel with gain tailoring by apertures with different diameters in the bottom p-dbr |
| 英文摘要 | The present invention relates to a semiconductor laser device, in particular a V(E)CSEL,using current-limiting apertures to tailor the gain profile of the laser. The laser comprises a layer stack sandwiched between a n-contact (7) and a p-contact (2), said layer stack at least containing an active region (5) and a p-doped semiconductor mirror (1) arranged on a p-doped side of the layer stack. At least two current-limiting apertures (3, 4) are arranged on the p-doped side, a second (4) of said current-limiting apertures being closer to the active region (5) and having a larger aperture size than a first(3) of said current- limiting apertures. With such a structure of the semiconductor laser a nearly gaussian carrier density profile, a good heat dissipation and an improved laser performance can be achieved. |
| 公开日期 | 2013-01-31 |
| 申请日期 | 2012-07-09 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63532]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KONINKLIJKE PHILIPS N.V. |
| 推荐引用方式 GB/T 7714 | GRONENBORN, STEPHAN,MOENCH, HOLGER. Vcsel with gain tailoring by apertures with different diameters in the bottom p-dbr. WO2013014563A1. 2013-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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