Vcsel structure
文献类型：专利
| 作者 | CHUNG, IL-SUG; TAGHIZADEH, ALIREZA |
| 发表日期 | 2016-02-18 |
| 专利号 | WO2015155188A3 |
| 著作权人 | DANMARKS TEKNISKE UNIVERSITET |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Vcsel structure |
| 英文摘要 | The invention relates to a VCSEL structure based on a novel grating reflector. The grating reflector (1) comprises a grating layer (20) with a contiguous core grating region having a grating structure, wherein an index of refraction of high-index sections (21) of the grating structure is at least 2.5, and wherein an index of refraction of low-index sections (22) of the grating structure is less than 2. The core grating region defines a projection in a direction normal to the grating layer. The grating reflector further comprises a cap layer (30) abutting the grating layer (20), and an index of refraction of the cap layer within the projection of the core grating region onto the cap layer is at least 2.5, and within the projection of the core grating region, the cap layer is abutted by a first solid dielectric low-index layer, an index of refraction of the first low-index layer or air being less than 2; and within the projection of the core grating region, the grating layer is also abutted by a second low-index layer and/or by air, an index of refraction of the second low-index layer or air being less than 2. The VCSEL structure furthermore comprises a first reflector and an active region for providing a cavity and amplification. The cap layer (30) may comprise an active layer (32) between cladding layers (31,33) and electrical contacts (35,36) to provide a current through the active layer. Current confinement may be realized by low-index oxide regions (60). |
| 公开日期 | 2016-02-18 |
| 申请日期 | 2015-04-07 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63576]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | DANMARKS TEKNISKE UNIVERSITET |
| 推荐引用方式 GB/T 7714 | CHUNG, IL-SUG,TAGHIZADEH, ALIREZA. Vcsel structure. WO2015155188A3. 2016-02-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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