Lateral injection vertical cavity surface-emitting laser
文献类型:专利
作者 | CHIROVSKY, LEO MARIA; D'ASARO, LUCIAN ARTHUR; HOBSON, WILLIAM SCOTT; LOPATA, JOHN |
发表日期 | 2001-01-31 |
专利号 | EP1073171A2 |
著作权人 | AGERE SYSTEMS OPTOELECTRONICS GUARDIAN CORPORATION |
国家 | 欧洲专利局 |
文献子类 | 发明申请 |
其他题名 | Lateral injection vertical cavity surface-emitting laser |
英文摘要 | A lateral injection VCSEL comprises upper and lower mirrors (12,14) forming a cavity resonator, an active region (16) disposed in the resonator, high conductivity upper and lower contact layers (18.1,22) located on opposite sides of the active region, upper and lower electrodes (18.4,26) disposed on the upper and lower contact layers, respectively, and on laterally opposite sides of the upper mirror, and a current guide structure (18) including an apertured high resistivity layer (18.3) for constraining current to flow in a relatively narrow channel through the active region, characterized in that a portion (22.1) of the lower contact layer (22) that extends under the top electrode has relatively high resistivity. This feature of the invention serves two purposes. First, it suppresses current flow in parallel paths and, therefore, tends to make the current density distribution in the aperture more favorable for the fundamental mode. Second, it reduces parasitic capacitance. |
公开日期 | 2001-01-31 |
申请日期 | 2000-07-17 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/63732] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | AGERE SYSTEMS OPTOELECTRONICS GUARDIAN CORPORATION |
推荐引用方式 GB/T 7714 | CHIROVSKY, LEO MARIA,D'ASARO, LUCIAN ARTHUR,HOBSON, WILLIAM SCOTT,et al. Lateral injection vertical cavity surface-emitting laser. EP1073171A2. 2001-01-31. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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