中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Lateral injection vertical cavity surface-emitting laser

文献类型:专利

作者CHIROVSKY, LEO MARIA; D'ASARO, LUCIAN ARTHUR; HOBSON, WILLIAM SCOTT; LOPATA, JOHN
发表日期2001-01-31
专利号EP1073171A2
著作权人AGERE SYSTEMS OPTOELECTRONICS GUARDIAN CORPORATION
国家欧洲专利局
文献子类发明申请
其他题名Lateral injection vertical cavity surface-emitting laser
英文摘要A lateral injection VCSEL comprises upper and lower mirrors (12,14) forming a cavity resonator, an active region (16) disposed in the resonator, high conductivity upper and lower contact layers (18.1,22) located on opposite sides of the active region, upper and lower electrodes (18.4,26) disposed on the upper and lower contact layers, respectively, and on laterally opposite sides of the upper mirror, and a current guide structure (18) including an apertured high resistivity layer (18.3) for constraining current to flow in a relatively narrow channel through the active region, characterized in that a portion (22.1) of the lower contact layer (22) that extends under the top electrode has relatively high resistivity. This feature of the invention serves two purposes. First, it suppresses current flow in parallel paths and, therefore, tends to make the current density distribution in the aperture more favorable for the fundamental mode. Second, it reduces parasitic capacitance.
公开日期2001-01-31
申请日期2000-07-17
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/63732]  
专题半导体激光器专利数据库
作者单位AGERE SYSTEMS OPTOELECTRONICS GUARDIAN CORPORATION
推荐引用方式
GB/T 7714
CHIROVSKY, LEO MARIA,D'ASARO, LUCIAN ARTHUR,HOBSON, WILLIAM SCOTT,et al. Lateral injection vertical cavity surface-emitting laser. EP1073171A2. 2001-01-31.

入库方式: OAI收割

来源:西安光学精密机械研究所

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