Semiconductor materials and devices
文献类型：专利
| 作者 | WATSON, IAN, MICHAEL INSTITUTE OF PHOTONICS; DAWSON, MARTIN INSTITUTE OF PHOTONICS; GU, ERDAN INSTITUTE OF PHOTONICS; MARTIN, ROBERT, WILLIAM DEPARTMENT OF PHYSICS; EDWARDS, PAUL, ROGER DEPARTMENT OF PHYSICS |
| 发表日期 | 2007-08-08 |
| 专利号 | EP1815568A1 |
| 著作权人 | UNIVERSITY OF STRATHCLYDE |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor materials and devices |
| 英文摘要 | A method of growing semiconductor materials in the Indium, Aluminium, Gallium Nitride (InA1GaN) material system and to devices made therefrom, in particular optical devices in the ultraviolet to green region of the visible spectrum. Certain optical devices, for example Vertical Cavity Surface Emitting Lasers (VCSELs) require great precision in the thickness of certain semiconductor layers. One aspect of the present invention provides a gallium-rich group III nitride layer (200, 201) and an adjacent layer of A1xInyGa1-x-yN layer (202). The AlxInyGa1-x-yN layer (202) acts as a fabrication facilitation layer and is selected to provide a good lattice match and high refractive index contrast with the gallium-rich group III nitride layer (200, 201). The high refractive index contrast permits in-situ optical monitoring. The extra layer (202) can be used as an etch marker or etch stop layer in subsequent processing and may be used in a lift-off process. |
| 公开日期 | 2007-08-08 |
| 申请日期 | 2005-11-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63779]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | UNIVERSITY OF STRATHCLYDE |
| 推荐引用方式 GB/T 7714 | WATSON, IAN, MICHAEL INSTITUTE OF PHOTONICS,DAWSON, MARTIN INSTITUTE OF PHOTONICS,GU, ERDAN INSTITUTE OF PHOTONICS,et al. Semiconductor materials and devices. EP1815568A1. 2007-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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