Vertical cavity surface-emitting laser and method of fabricating the same
文献类型：专利
| 作者 | KIM, IN; LEE, EUN-HWA; KIM, SUNG-WON |
| 发表日期 | 2008-06-26 |
| 专利号 | US20080151961A1 |
| 著作权人 | SAMSUNG ELECTRONICS CO. ; LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Vertical cavity surface-emitting laser and method of fabricating the same |
| 英文摘要 | A vertical cavity surface-emitting laser (VCSEL) and a method of fabricating the same with easier alignment of a light output side aperture and an oxide aperture, The VCSEL includes: lower and upper reflection layers laminated with each other and forming a longitudinal resonance section there between; an active layer for producing a laser beam, an electrode formed in a ring shape on the upper reflection layer so the electrode has an aperture through which the laser beam is projected; a contact layer formed on the upper reflection layer; a ¼ wavelength layer formed on the contact layer such that a high transmittance area with the highest transmittance for the laser beam is formed within the aperture of the electrode; and a dielectric layer covering the contact layer and the ¼ wavelength layer, except for the electrode formed part. |
| 公开日期 | 2008-06-26 |
| 申请日期 | 2007-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63845]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 1.LTD. 2.SAMSUNG ELECTRONICS CO. |
| 推荐引用方式 GB/T 7714 | KIM, IN,LEE, EUN-HWA,KIM, SUNG-WON. Vertical cavity surface-emitting laser and method of fabricating the same. US20080151961A1. 2008-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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