Semiconductor laser device and photodetector
文献类型：专利
| 作者 | HASHIMOTO MASAYASU; YONEYAMA HIROFUMI; WATABE YASUHIRO |
| 发表日期 | 1990-03-16 |
| 专利号 | JP1990077186A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and photodetector |
| 英文摘要 | PURPOSE:To make it possible to monitor output light stably without adverse effects of light from an external resonator reflection surface to laser fluxes emitted by a laser element, by positioning the photosensing surface having a reflecting coat film of a photodetector such that it is opposed to and spaced from the light-emitting end face of the laser element by a specific distance and forming the phtosensing surface of the photodetector from a material having properties of absorbing light from the laser element. CONSTITUTION:The photosensing surface of a photodetector 2 as an external resonator reflection surface is arranged at a position spaced by 100mum+ or -50mum from a Fabry-Perot resonant surface. The photodetector 2 has an electrode 21 and a reflecting film 22 provided on the surface of silicon crystals having P-I-N structure in which the P-type layer is formed by diffusing boron from the surface to a depth of 2 to 5mum. Light not involved in resonance at the reflection surface is guided to the photosensing surface at a certain proportion, or reflected or absorbed by the element. Further, internal reflected light is also eliminated by the light absorbing properties of the element. Accordingly, intrinsic laser fluxes emitted by the laser are not affected thereby. The position of the reflection surface can be specified efficiently by the light absorbing properties of the element. Further, the photosensing surface is allowed to have a large area and a shallow junction by the diffusion and, therefore, light output can be monitored efficiently and stably. |
| 公开日期 | 1990-03-16 |
| 申请日期 | 1988-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63871]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | HASHIMOTO MASAYASU,YONEYAMA HIROFUMI,WATABE YASUHIRO. Semiconductor laser device and photodetector. JP1990077186A. 1990-03-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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