Vertical mode control semiconductor laser
文献类型：专利
| 作者 | KOBAYASHI ATSUYUKI; OKI YOSHIMASA |
| 发表日期 | 1986-06-25 |
| 专利号 | JP1986137385A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Vertical mode control semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate the manufacture by holding a zone of polycrystals having different refractive indexes in a resonator to form a vertical mode control semiconductor laser. CONSTITUTION:An SiO2 stripe 12 of the prescribed size is formed by a photolithography at a suitable intermediate position of an end resonator length on a substrate 10. An N type InP buffer layer 11 and a current narrowing reverse junction 4B are grown thereon. A groove is formed by chemical etching in a direction perpendicular to the stripe 12 by a photolithography, buried and grown in the groove to grown an N type InP N type clad layer 2, an undoped InGaAsP active region 1, a P type InP P type cap layer 5 are grown. An end resonator is formed by cleavage, electrodes 6, 7 are attached to obtain a vertical control semiconductor laser of internal reflection interference type. |
| 公开日期 | 1986-06-25 |
| 申请日期 | 1984-12-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63877]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KOBAYASHI ATSUYUKI,OKI YOSHIMASA. Vertical mode control semiconductor laser. JP1986137385A. 1986-06-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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