Nitride based semiconductor laser device
文献类型：专利
| 作者 | KAMEYAMA, SHINGO; NOMURA, YASUHIKO; HIROYAMA, RYOJI; HATA, MASAYUKI |
| 发表日期 | 2009-04-02 |
| 专利号 | US20090086778A1 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride based semiconductor laser device |
| 英文摘要 | One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet. |
| 公开日期 | 2009-04-02 |
| 申请日期 | 2008-09-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63879]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | KAMEYAMA, SHINGO,NOMURA, YASUHIKO,HIROYAMA, RYOJI,et al. Nitride based semiconductor laser device. US20090086778A1. 2009-04-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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