Variable wavelength semiconductor laser
文献类型：专利
| 作者 | MURATA SHIGERU |
| 发表日期 | 1991-04-10 |
| 专利号 | JP1991084985A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Variable wavelength semiconductor laser |
| 英文摘要 | PURPOSE:To realize change in the wavelength at high speed by doping a light guiding layer with P-type impurity of high concentration. CONSTITUTION:This semiconductor laser is composed of three regions, namely an active region 100, a phase control region 200 and a distribution Bragg reflection(DBR) region 300. The phase control region 200 and the DBR region 300 have the same layer structure. These two regions compose a wavelength control region 400, where a light guiding layer 30 exists, and carriers are injected in said layer 30 in order to control the wavelength. When electrons are injected in a P-type carrier injection layer through a P-N junction, the change in its refractive index is large. While, when N-type carriers are injected, the change in the refractive index is little because electrons have been existing from the beginning. Accordingly, it is necessary that the impurities injected in the carrier injection layer is P-type in order to realize a change in wavelength at high speed. |
| 公开日期 | 1991-04-10 |
| 申请日期 | 1989-08-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63884]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | MURATA SHIGERU. Variable wavelength semiconductor laser. JP1991084985A. 1991-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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