Semiconductor laser device and its inspection method
文献类型：专利
| 作者 | KAJIMURA TAKASHI; ONO YUICHI; YAMASHITA SHIGEO; KANEKO TADAO; TANAKA TOSHIAKI; YAMANAKA AKISANE |
| 发表日期 | 1988-06-28 |
| 专利号 | JP1988155784A |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and its inspection method |
| 英文摘要 | PURPOSE:To gneatly reduce evaluation processes of manufacturing semiconductor laser so as to offer inexpensive laser, by disposing a plurality of semiconductor laser resonators on a single substrate of a wafer for semiconductor laser and inclining one-sided end surfaces of prescribed resonators so that laser beams of the resonators can be drawn upwardly from the wafer. CONSTITUTION:A double hetero structure 2 is formed on a GaAs substrate 1, and further electrodes 3 on an epitaxial growth layer side and an electrode 4 on a substrate side are disposed. Fabry-Perot resonators 5, 6 are formed by a dry etching method. Inclined etching surfaces 7 are disposed adjacent to laser end surfaces 6 in positions shown by X marks, and so laser beams 8 radiated from the end surfaces 6 are radiated upwardly from the wafer by these inclined surfaces. Current injection is performed in the semiconductor laser formed on the epitaxial wafer in this structure, and the laser beams 8 radiated outwardly in the positions shown by X marks are separated by a spectroscope so that oscillation wavelengths and shapes of oscillation spectra can be measured. |
| 公开日期 | 1988-06-28 |
| 申请日期 | 1986-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63889]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | KAJIMURA TAKASHI,ONO YUICHI,YAMASHITA SHIGEO,et al. Semiconductor laser device and its inspection method. JP1988155784A. 1988-06-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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