中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Multi-beam semiconductor laser device and manufacture thereof

文献类型:专利

作者KARAKIDA SHOICHI; SHIMA AKIHIRO
发表日期1990-09-25
专利号JP1990240992A
著作权人三菱電機株式会社
国家日本
文献子类发明申请
其他题名Multi-beam semiconductor laser device and manufacture thereof
英文摘要PURPOSE:To establish easily an angle (thetart. angle) spreading in the vertical direction of a laser beam so that its spread of the angle is superior in controllability and reproducibility by making the sum of thicknesses of clad layers which are provided on both sides of the first active layer smaller than that of the clad layers which are provided on both sides of the second active layer. CONSTITUTION:A p-type Ga0.86Al0.15As active layer 5c having a uniform thickness, a thick n-type Ga0.25Al0.48As the second clad layer 6a, and a thin n-type Ga0.52Al0.52As the second clad layer 6b are provided. The sum of thicknesses of clad layers 6b and 4 that are provided on both sides of the first active layer 5c is allowed to become smaller than that of thicknesses of clad layers 6a and 4 that are provided on both sides of the second active layer 5c. This approach makes a plurality of lasers in an element hold each angle (thetart. angle) spreading in the vertical direction of each different laser beam.
公开日期1990-09-25
申请日期1989-03-14
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/63892]  
专题半导体激光器专利数据库
作者单位三菱電機株式会社
推荐引用方式
GB/T 7714
KARAKIDA SHOICHI,SHIMA AKIHIRO. Multi-beam semiconductor laser device and manufacture thereof. JP1990240992A. 1990-09-25.

入库方式: OAI收割

来源:西安光学精密机械研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。