Multi-beam semiconductor laser device and manufacture thereof
文献类型:专利
作者 | KARAKIDA SHOICHI; SHIMA AKIHIRO |
发表日期 | 1990-09-25 |
专利号 | JP1990240992A |
著作权人 | 三菱電機株式会社 |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Multi-beam semiconductor laser device and manufacture thereof |
英文摘要 | PURPOSE:To establish easily an angle (thetart. angle) spreading in the vertical direction of a laser beam so that its spread of the angle is superior in controllability and reproducibility by making the sum of thicknesses of clad layers which are provided on both sides of the first active layer smaller than that of the clad layers which are provided on both sides of the second active layer. CONSTITUTION:A p-type Ga0.86Al0.15As active layer 5c having a uniform thickness, a thick n-type Ga0.25Al0.48As the second clad layer 6a, and a thin n-type Ga0.52Al0.52As the second clad layer 6b are provided. The sum of thicknesses of clad layers 6b and 4 that are provided on both sides of the first active layer 5c is allowed to become smaller than that of thicknesses of clad layers 6a and 4 that are provided on both sides of the second active layer 5c. This approach makes a plurality of lasers in an element hold each angle (thetart. angle) spreading in the vertical direction of each different laser beam. |
公开日期 | 1990-09-25 |
申请日期 | 1989-03-14 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/63892] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | 三菱電機株式会社 |
推荐引用方式 GB/T 7714 | KARAKIDA SHOICHI,SHIMA AKIHIRO. Multi-beam semiconductor laser device and manufacture thereof. JP1990240992A. 1990-09-25. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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