Semiconductor optical amplifying element, semiconductor optical element and method for using these elements
文献类型：专利
| 作者 | NITTA ATSUSHI |
| 发表日期 | 1991-11-06 |
| 专利号 | JP1991248130A |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical amplifying element, semiconductor optical element and method for using these elements |
| 英文摘要 | PURPOSE:To obtain an always high gain state by forming regions which are electrically changed in the refractive index of a semiconductor near the end of a semiconductor laser and changing the refractive index of these regions. CONSTITUTION:The constitution to electrically control the refractive index of the waveguide layer parts, i.e. window waveguide layers 7a, 7b in contact with antireflection films 10a, 10b in such a manner that the reflectivity of the antireflection films 10a, 10b is smaller with respect to the wavelength of input light or the peak wavelength at the gain spectra of an active layer 4 is adopted. The equiv. refractive index of the window waveguide layers 7a, 7b is, therefore, changed by a plasma effect. The higher current injection state, i.e. high gain state is obtd. in this way. |
| 公开日期 | 1991-11-06 |
| 申请日期 | 1990-02-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63895]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | NITTA ATSUSHI. Semiconductor optical amplifying element, semiconductor optical element and method for using these elements. JP1991248130A. 1991-11-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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