Nitride-based semiconductor light-emitting device and method of fabricating the same
文献类型：专利
| 作者 | HATA, MASAYUKI; NOMURA, YASUHIKO; INOUE, DAIJIRO |
| 发表日期 | 2006-01-26 |
| 专利号 | US20060018353A1 |
| 著作权人 | EPISTAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride-based semiconductor light-emitting device and method of fabricating the same |
| 英文摘要 | A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement. |
| 公开日期 | 2006-01-26 |
| 申请日期 | 2005-09-23 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63904]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | EPISTAR CORPORATION |
| 推荐引用方式 GB/T 7714 | HATA, MASAYUKI,NOMURA, YASUHIKO,INOUE, DAIJIRO. Nitride-based semiconductor light-emitting device and method of fabricating the same. US20060018353A1. 2006-01-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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