Method for epitaxial growth of lattice mismatching crystal
文献类型：专利
| 作者 | ODA HITOSHI; ISHIZAKI AKIYOSHI |
| 发表日期 | 1992-02-04 |
| 专利号 | JP1992032222A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for epitaxial growth of lattice mismatching crystal |
| 英文摘要 | PURPOSE:To make the epitaxial growth of even a lattice mismatching crystal possible with a defect density reduced by a method wherein amorphous material is partially formed on the surface of one of the two semiconductor materials and the other semiconductor material is developed on the amorphous material-formed semiconductor material by the epitaxial growth. CONSTITUTION:If the As beam is applied to a GaAs substrate 1 at the temperature within a certain range, amorphous-As 2 is partially attached on the GaAs substrate like islands. When the emission of the As beam is stopped and the substrate temperature is reduced down to the CdTe film formation temperature, the islands of amorphous-As 2 are fastened in the initial condition. Under such conditions, the Cd/Te beam is applied to the substrate to start the development of a CdTe film. Since an attachment coefficient of the CdTe film is small on the As islands 2, the CdTe film 3 is started to be developed at the exposed surface of the GaAs substrate After the CdTe growth film 3 fills up the spaces between As islands 2 or the area other than the one where As is partially attached, it starts to grow in the transverse direction like it covers the As islands 2. Gradually, the adjoining CdTe films 3 crash into each other on the As islands. However, there is no grain boundary caused. Consequently,t he defective-free good-quality epitaxial CdTe film 3 is developed. |
| 公开日期 | 1992-02-04 |
| 申请日期 | 1990-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63909]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | ODA HITOSHI,ISHIZAKI AKIYOSHI. Method for epitaxial growth of lattice mismatching crystal. JP1992032222A. 1992-02-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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