Liquid-phase epitaxial crystal growth device
文献类型：专利
| 作者 | TAKEUCHI HIDEO; HATA NAOKUNI; SUGINO TAKASHI; YOSHIKAWA NORIYUKI |
| 发表日期 | 1985-07-20 |
| 专利号 | JP1985137014A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid-phase epitaxial crystal growth device |
| 英文摘要 | PURPOSE:To eliminate the remaining of a solution by making a section adjacent to a substrate in the front section of a crystal substrate placing section lower than the surface of the substrate. CONSTITUTION:In a crystal substrate placing section 7, the height of the surface is made lower than the height of the upper surface of a substrate 2, solutions of four kinds for growth are put into a slider 3 in order to prepare a semiconductor laser, the substrate 2 is mounted, and a temperature is elevated. The placing section 7 is cooled for 10min at a cooling rate of 0.5 deg.C/min. The slider 3 is moved forward, and the first layer solution is kept for 10min on the substrate 2. Likewise, the second layer one is grown for 1sec, the third layer one for 3min and the fourth layer one for 1min in succession. The fourth layer one is moved up to the position of a waste liquor reservoir 4a. |
| 公开日期 | 1985-07-20 |
| 申请日期 | 1983-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63910]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | TAKEUCHI HIDEO,HATA NAOKUNI,SUGINO TAKASHI,et al. Liquid-phase epitaxial crystal growth device. JP1985137014A. 1985-07-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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