Optical element having quantum well structure
文献类型：专利
| 作者 | TAKANO SHINJI |
| 发表日期 | 1992-06-22 |
| 专利号 | JP1992174585A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical element having quantum well structure |
| 英文摘要 | PURPOSE:To increase the light emitting and absorbing efficiencies of the title element by using such a quantum well structure that the interface between a well and barrier layers is constituted of an inclined layer having a continuously varying forbidden band width. CONSTITUTION:A barrier layer 51 is made of InP and a well layer 52 is composed of an InGaAs layer 53 and inclined layer 54. The composition of the inclined layer 54 gradually changes from InGaAsP to InGaAs. After an n-InP clad layer 20, quantum well structure 50, p-InP clad layer 60, and p-InGaAsP contact layer 70 are formed on an n-InP semiconductor substrate 10, a multiplexed quantum well optical modulator having such structure is buried by means of high-resistance InP (Fe-doped) 80. By using such structure, an optical modulator which is low in driving voltage and has an excellent damping ratio is obtained. In other words, a high-performance element having a quantum well structure which is high in light emitting and absorbing efficiencies can be obtained. |
| 公开日期 | 1992-06-22 |
| 申请日期 | 1990-11-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63913]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | TAKANO SHINJI. Optical element having quantum well structure. JP1992174585A. 1992-06-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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