Integrated-type light-emitting element
文献类型：专利
| 作者 | YAGI KATSUMI |
| 发表日期 | 1989-11-27 |
| 专利号 | JP1989293589A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated-type light-emitting element |
| 英文摘要 | PURPOSE:To enable bonding efficiency to be improved and reproducing properties of alignment to be improved by integrating a semiconductor laser part of GaAs series and a light waveguide path generating secondary harmonics while guiding the laser light and by setting the deflection direction of laser light in the direction where light waveguide path effectively generates second harmonics. CONSTITUTION:A semiconductor laser part 2 of GaAs series generating laser light and a light waveguide path 3 generating second harmonics while guiding the laser light are integrated on a GaAs substrate 1 and the deflection direction of the above laser light is set in the direction where the light waveguide path 3 generates the second harmonics efficiently. For example, a semiconductor laser part 2 where an n-GaAs buffer layer 21, an N-AlGaAs clad layer 22, an N-GaAs active layer 23, a P-AlGaAs clad layer 24, and a P-GaAs cap layer 25 are laminated is formed on the upper surface of the GaAs substrate 1 with [100] orientation and the light waveguide path 3 is formed in a specified direction where an undoped ZnS clad layer 31, an undoped ZnSeS core layer 32, and an undoped ZnS clad layer 33 are laminated. |
| 公开日期 | 1989-11-27 |
| 申请日期 | 1988-05-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63914]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | YAGI KATSUMI. Integrated-type light-emitting element. JP1989293589A. 1989-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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