Mode-locked semiconductor laser
文献类型：专利
| 作者 | MURATA SHIGERU |
| 发表日期 | 1992-01-07 |
| 专利号 | JP1992002190A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Mode-locked semiconductor laser |
| 英文摘要 | PURPOSE:To provide a monolithic integration type mode-locked semiconductor laser having a function of controlling a spectral width, a resonator frequency or a wavelength chirp by disposing an active region having a gain, an optical waveguide region transparent for an oscillation light, and a reflecting region having a diffraction grating by optically coupling on a semiconductor substrate. CONSTITUTION:A laser resonator has two reflectors, i.e., a distribution Bragg's reflector of a reflecting region 300 and a cleaved end of an active region 100. An electrode 80 is provided on the region 300, and a current can be injected to an optical guide layer 20 disposed on the region 300. A resonator frequency corresponding to a resonator length matched to the region 100 and an optical waveguide region 200 coincides with the period of a necessary mode synchronizing light pulse. A diffraction grating 90 selectively reflects only a light having a certain reflected wavelength width having a Bragg's wavelength as a center. Thus, the reflecting wavelength width is varied according to parameters such as the length of the grating 90, a coupling efficiency, a waveguide loss, etc. Accordingly, any of these parameters is controlled to control a spectral width. |
| 公开日期 | 1992-01-07 |
| 申请日期 | 1990-04-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63920]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | MURATA SHIGERU. Mode-locked semiconductor laser. JP1992002190A. 1992-01-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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