Semiconductor light-emitting element and manufacture thereof
文献类型：专利
| 作者 | YUGE SHOZO |
| 发表日期 | 1987-09-19 |
| 专利号 | JP1987213187A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element and manufacture thereof |
| 英文摘要 | PURPOSE:To mass-produce a laser having excellent modal control with superior reproducibility by burying and forming a light guide layer into a stripe and arranging an active layer onto the light guide layer through an extremely thin clad layer. CONSTITUTION:A first clad layer 12 on a gallium-arsenide substrate 101, a second clad layer 13 having a striped broken section 13a on the layer 12 and functioning as a current constriction layer in combination, a light guide layer 14 filled into the broken section 13a inthe second clad layer 13 and having an optical refractive index larger than the layer 13, a third layer 15 continuously covering the second clad layer 13 and the upper surface of the light guide layer 14 and having predetermined thickness, an active layer 16 having the optical refractive index larger than the layer 15 on the layer 15 and a fourth clad layer 17 formed onto the active layer 16 and having the optical refractive index smaller than the layer 16 are shaped. An organic epitaxial method is applied for manufacture. Accordingly, a distance between the active laye and the light guide layer can easily be controlled with excellent reproducibility, thus reducing the spot diameter of light emission, then acquiring a laser having superior modal controllability. |
| 公开日期 | 1987-09-19 |
| 申请日期 | 1986-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63921]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | YUGE SHOZO. Semiconductor light-emitting element and manufacture thereof. JP1987213187A. 1987-09-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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