High performance semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | FUKUZAWA TADASHI; NAKAJIMA HISAO; OOTA TSUNEAKI; UCHIDA YOUKO; KOBAYASHI KEISUKE; NARISAWA TADASHI; WATANABE NOZOMI |
| 发表日期 | 1985-02-23 |
| 专利号 | JP1985035591A |
| 著作权人 | KOGYO GIJUTSUIN (JAPAN) |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | High performance semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To stabilize oscillation and thus facilitate the manufacture by a method wherein the first conductivity type semiconductor of stripe form and the second conductivity type impurity diffused region of the upper clad layer are put in a state of no direct connection in an electric manner. CONSTITUTION:The lower clad layer 2, an active layer 4, and the upper clad layer 3 are successively formed on a substrate 1, and an N type GaAs layer 5 is formed on the upper clad layer 3. Next, after the layer 5 is mesa-etched into a stripe form by utilization of a mask 12, a P type impurity 13 is diffused until it reaches at least a semiconductor extremely thin film at the lowermost layer of the active layer 4. Then, after removal of the part 8 under the mask in which a P type impurity is diffused, the upper surface of the upper clad layer 3 is covered with an oxide film 9. Successively, the mask 12 is removed and thereafter AuGeNi10 is evaporated, thus being put in ohmic contact with the layer 5, and made as the N-side electrode. CrAu11 is evaporated on the back surface of the substrate crystal 1 and thus made as the P-side electrode, both end surfaces of the multilayer structure thus formed being cleft into a reflection mirror, and the title device is then obtained. |
| 公开日期 | 1985-02-23 |
| 申请日期 | 1983-08-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63925]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN (JAPAN) |
| 推荐引用方式 GB/T 7714 | FUKUZAWA TADASHI,NAKAJIMA HISAO,OOTA TSUNEAKI,et al. High performance semiconductor laser device and manufacture thereof. JP1985035591A. 1985-02-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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