Semiconductor laser device with small variation of the oscillation wavelength
文献类型：专利
| 作者 | TAKAGI, KAZUHISA; YAMATOYA, TAKESHI; WATATANI, CHIKARA |
| 发表日期 | 2007-07-26 |
| 专利号 | US20070171950A1 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device with small variation of the oscillation wavelength |
| 英文摘要 | A semiconductor laser has a structure in which the following layers are stacked on one another over an n-type substrate: a buffer layer, a diffraction grating layer, a diffraction grating burying layer, a light confining layer, a multiple quantum well active layer, a light confining layer, and a cladding layer. In this structure, the distance D between the center of the active layer and the interface between the n-type substrate and the buffer layer is set to a value longer than the 1/e2-beam spot radius a of the laser light. |
| 公开日期 | 2007-07-26 |
| 申请日期 | 2006-09-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63927]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | TAKAGI, KAZUHISA,YAMATOYA, TAKESHI,WATATANI, CHIKARA. Semiconductor laser device with small variation of the oscillation wavelength. US20070171950A1. 2007-07-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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