Phase-locked type semiconductor laser array and its manufacture
文献类型:专利
作者 | HASHIMOTO AKIHIRO; FUKUNAGA TOSHIAKI; WATANABE NOZOMI |
发表日期 | 1990-02-01 |
专利号 | JP1990031484A |
著作权人 | OKI ELECTRIC IND CO LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Phase-locked type semiconductor laser array and its manufacture |
英文摘要 | PURPOSE:To radiate an optical output from a semiconductor laser array part as an optical output in a 0 deg.-phase mode by a method wherein a new phase shifter is integrated in the semiconductor laser array part which is oscillated in a 180 deg.-phase mode. CONSTITUTION:In order to give a phase shift to an optical output from individual light waveguides 13 in a semiconductor laser array part 11, a part 39a corresponding to individual light waveguides 25a to 25c in a semiconductor layer 39 is formed of a semiconductor layer of a multiple-quantum-well structure; a part 39c corresponding to other light waveguides 23a to 23c is formed of a semiconductor layer of the multiple-quantum-well structure after this layer has been made disordered so as to obtain a prescribed refractive index. Parts between the individual light waveguides are filled with a part 39b after the semiconductor layer of the multiple-quantum-well structure has been made disordered in the same manner as the semiconductor laser array part 1 By using a phase shifter part 21 of the above structure, it is possible to produce a difference in a refractive index of about 1% between adjacent light waveguides. Thereby, beams radiated from the semiconductor laser array part 11 in a 180 deg.-phase mode become an identical phase at a radiation end face and can be made a 0 deg.-phase mode. |
公开日期 | 1990-02-01 |
申请日期 | 1988-07-21 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/63935] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | OKI ELECTRIC IND CO LTD |
推荐引用方式 GB/T 7714 | HASHIMOTO AKIHIRO,FUKUNAGA TOSHIAKI,WATANABE NOZOMI. Phase-locked type semiconductor laser array and its manufacture. JP1990031484A. 1990-02-01. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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