Liquid-phase growing method
文献类型：专利
| 作者 | UMEKI ITSUO; NAKAI SABUROU |
| 发表日期 | 1982-09-16 |
| 专利号 | JP1982149729A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid-phase growing method |
| 英文摘要 | PURPOSE:To form a thin-film in an epitaxial shape in excellent yield by deepening a wafer receiving groove more than the corresponding section of the bottom of a solution reservoir, shaping a projection section at the end section of a wafer and heightening height more than a section contacting with a molten metal. CONSTITUTION:The projections A' having d height are formed at both ends of the wafer 2a, and deepened more than the corresponding section of the bottom of the solution reservoir, and the surface A is contacted with the bottom of a molten metal reservoir. A spring 6 is mounted into the wafer groove of a fixed boat 1 to push the wafer 2a, or the surface A of the wafer is contacted with the bottom of the molten metal reservoir by disposing a screw to the bottom of the boat 1, and an interval between the surface B of the wafer and the bottom of the metal reservoir can be set accurately. Accordingly, desired composition, film thickness and surface condition are obtained through multilayer growth because the residue of the molten metal 3a on the wafer is removed. A temperature, time, etc. may be controlled using wax as a mask in a III-V group compound semiconductor and the semiconductor may be etched in order to form the projections at the end sections of the wafer. |
| 公开日期 | 1982-09-16 |
| 申请日期 | 1981-03-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63938]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | UMEKI ITSUO,NAKAI SABUROU. Liquid-phase growing method. JP1982149729A. 1982-09-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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