Optical compound semiconductor device
文献类型：专利
| 作者 | FUJII TAKUYA |
| 发表日期 | 1992-09-16 |
| 专利号 | JP1992260377A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical compound semiconductor device |
| 英文摘要 | PURPOSE:To enable a current injection efficiency into a quantum thin-wire active layer to be enhanced by allowing an active light path region to form a potential barrier for an electric charge carrier and the quantum thin-wire structure for achieving a function regarding light with a specified wavelength to be included. CONSTITUTION:A light path region 5 which is formed in stripes on a lower light confinement layer 7 with one conductivity type forms a potential barrier region 1 excluding a plurality of one-dimensional gap region with a specified width or less and includes a quantum thin-wire structure 2 achieving a function regarding a light with a specified wavelength at the gap region. An upper entrapment region 6 which is formed of a compound semiconductor with a larger energy gap than that of light of the specified wavelength and has a conductive type which is opposite to that of the lower confinement region is formed on this active region 5. Also, a sideway light confinement region 8 which is formed of a compound semiconductor with a larger energy gap than the light with the specified wavelength and is electrically inactive is formed on the side of the active light path region 5. |
| 公开日期 | 1992-09-16 |
| 申请日期 | 1991-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63939]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FUJII TAKUYA. Optical compound semiconductor device. JP1992260377A. 1992-09-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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