Semiconductor laser capable of coupling with single mode optical fiber at high coupling efficiency
文献类型：专利
| 作者 | NAGASHIMA, YASUAKI; YAMADA, ATSUSHI; SHIMON, YOSHIHARU; KIKUGAWA, TOMOYUKI |
| 发表日期 | 2006-12-21 |
| 专利号 | US20060285560A1 |
| 著作权人 | ANRITSU CORPORTION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser capable of coupling with single mode optical fiber at high coupling efficiency |
| 英文摘要 | A semiconductor laser includes a substrate made of InP, an active layer including a multiquantum well structure, which is formed in a width of 7 to 14 μm on the substrate, and an n-type cladding layer made of InGaAsP and a p-type cladding layer made of InP, which are formed on the substrate with the active layer interposed therebetween. The semiconductor laser oscillates only in the fundamental lateral mode, and light emitted from an exit facet can be optically coupled with an external single mode optical fiber. |
| 公开日期 | 2006-12-21 |
| 申请日期 | 2005-03-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63942]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ANRITSU CORPORTION |
| 推荐引用方式 GB/T 7714 | NAGASHIMA, YASUAKI,YAMADA, ATSUSHI,SHIMON, YOSHIHARU,et al. Semiconductor laser capable of coupling with single mode optical fiber at high coupling efficiency. US20060285560A1. 2006-12-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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