Manufacture of distributed feedback semiconductor laser
文献类型：专利
| 作者 | FUJIWARA MASATOSHI |
| 发表日期 | 1990-03-05 |
| 专利号 | JP1990065192A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of distributed feedback semiconductor laser |
| 英文摘要 | PURPOSE:To partly vary the ratio of thicknesses of an active layer to a waveguide layer and to obtain a single wavelength oscillation with a low threshold value by employing the selective growth of an optical CVD crystal growing technique in a distributed feedback semiconductor laser. CONSTITUTION:A shielding mask 5 is mounted on a semiconductor substrate 1 formed with a diffraction grating thereby to form an optical guide 2 while radiating the part with a light. Then, a shielding mask 6 is employed to invert the part to be radiated with the light and the part to be shielded thereby to form an active layer 3. Thereafter, a different conductivity type clad layer 4 from the substrate 1 is formed. After these crystal growths are finished, a mesa stripe is formed, buried, grown to form electrodes, and its refractive index is varied on the way of the layer 2 to obtain a similar effect to that of a lambda/4 sift method. A distributed feedback semiconductor laser in which enables a single wavelength oscillation only at the Bragg's wavelength is obtained. |
| 公开日期 | 1990-03-05 |
| 申请日期 | 1988-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63943]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | FUJIWARA MASATOSHI. Manufacture of distributed feedback semiconductor laser. JP1990065192A. 1990-03-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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