Pattern formation
文献类型：专利
| 作者 | FUJIWARA KANJI; MORIMOTO MASAHIRO |
| 发表日期 | 1985-07-19 |
| 专利号 | JP1985136278A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Pattern formation |
| 英文摘要 | PURPOSE:To optimize the processing time without taking out a processed semiconductor substrate from developer so often by a method wherein a pattern is formed by selectively removing a resist film while the shape of the pattern is monitored with diffraction light of light flux. CONSTITUTION:The semiconductor substrate 11 is coated with resist, which is passed through processes by the conventional technique, and the exposure of the stripe pattern is performed with the two-flux interference method using a light flux of He-Cd laser. For the purpose of developing this resist film 12, the substrate is dipped in the developer 14 by the conventional technique. The light flux of He-Ne laser is made incident to the resist film 12 being under development, and the strength of its primary diffraction light shown by broken lines is monitored. As the development advances, the diffraction light is detected with the gradual increase in strength. At the point of maximum, the substrate 11 is taken out of the developer 14 and rinsed by the usual method, and then the substrate is etched by using the pattern-formed resist film as a mask. |
| 公开日期 | 1985-07-19 |
| 申请日期 | 1983-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63944]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | FUJIWARA KANJI,MORIMOTO MASAHIRO. Pattern formation. JP1985136278A. 1985-07-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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