Semiconductor distribution feedback type laser device
文献类型：专利
| 作者 | TADA KUNIO; NAKANO YOSHIAKI; INOUE TAKESHI; RA TAKESHI; IRITA TAKESHI; NAKAJIMA SHINICHI |
| 发表日期 | 1992-05-28 |
| 专利号 | JP1992155986A |
| 著作权人 | HIKARI KEISOKU GIJIYUTSU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor distribution feedback type laser device |
| 英文摘要 | PURPOSE:To form gain regions and absorptive regions alternately so as to get a large intermode gain by providing light absorbing layer at each apex of a semiconductor layer. CONSTITUTION:Each layer of double hetero junction structure is epitaxially grown separately in two stages. In the first stage, a clad layer 3, a semiconductor layer 4, a light absorbing layer 3 are grown on a substrate Next, by interfering exposure method and chemical etching, irregularities equivalent to the diffraction grating 256nm in cycle are marked at the light absorbing layer 13 and the semiconductor layer 4. In the second stage, a shock absorbing layer 6 is grown on the light absorbing layer 13 and the semiconductor layer 4, and further an active layer 7, a clad layer 8, and a contact layer 9 are grown in order continuously to complete double hetero structure. Next, an SiO2 insulating layer 12 is stacked on the top of the contact layer 9 to form a stripe-shaped window, for example, 10mum in width, and then electrode layers 11 and 10 are deposited. Furthermore, this is cleaved to complete individual semiconductor laser elements. |
| 公开日期 | 1992-05-28 |
| 申请日期 | 1990-10-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63956]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI KEISOKU GIJIYUTSU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | TADA KUNIO,NAKANO YOSHIAKI,INOUE TAKESHI,et al. Semiconductor distribution feedback type laser device. JP1992155986A. 1992-05-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。