Light modulation type integrated circuit element
文献类型：专利
| 作者 | OONO KUNIO; NISHIOKA KIMIHIKO; NANBA AKIHIRO; MIZUSAKI TAKASHI; IINO MASARU |
| 发表日期 | 1983-01-19 |
| 专利号 | JP1983009388A |
| 著作权人 | OLYMPUS KOGAKU KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light modulation type integrated circuit element |
| 英文摘要 | PURPOSE:To enable to perform direct modulation of the light emitted by a diode by a method wherein a laser diode and an SIT are formed by having a common semiconductor region, an input modulation signal is applied to the SIT gate, and a drain current which varies according to the input modulation signal is applied to the diode as an oscillation current through the intermediary of a common region. CONSTITUTION:An n type GaAs layer 32, while will be commonly used as a drain of the SIT and the carrier injection region of the laser diode, is formed on a semiinsulating GaAs substrate 31, an n type GaAs layer 22 are laminated and coated on approximately half of the layer 32, the center part is formed in concave shape, and a gate 23 which was connected to a modulation signal line 38 is adhered to the concave part. Also, a source region 25 is provided at convex parts located on both sides of the gate 23 through the intermediary of an n type GaAs layer 24 and the above is used as the SIT. Then, an n type GaAs layer 33, a GaAs active layer 34, a p type GaAlAs layer 35, a p type GaAs layer 36 and a metal layer 37 are provided on the other half of the layer 32 leaving intervals, the above is used as the laser diode, and the light of diode is modulated by the signal line 38. |
| 公开日期 | 1983-01-19 |
| 申请日期 | 1981-07-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63963]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OLYMPUS KOGAKU KOGYO KK |
| 推荐引用方式 GB/T 7714 | OONO KUNIO,NISHIOKA KIMIHIKO,NANBA AKIHIRO,et al. Light modulation type integrated circuit element. JP1983009388A. 1983-01-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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