Surface luminous type semiconductor laser device
文献类型：专利
| 作者 | NITTA ATSUSHI |
| 发表日期 | 1989-11-14 |
| 专利号 | JP1989282882A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface luminous type semiconductor laser device |
| 英文摘要 | PURPOSE:To improve an outer differential quantum effect by making a reflector constituting a resonator rightly above and under an active region constituting a laser resonator to have an area equal to or more than an area of a crystal growth surface. CONSTITUTION:When bias voltage is impressed between the first and second electrodes 12 and 10 of a surface luminous type semiconductor laser in the forward direction, a carrier is injected through a course leading from the bottom part of a through hole 2 through an active region (an oblique line part D inside the active layer 6 directly under a cap layer 7) to a transparent electrode layer 9 contacting with a circle on the cap layer 7 to the active layer to generate radiation so that laser oscillation is generated by a positive feedback action of a resonator to be constituted of an oblique line part A2 of the second electrode 10 of the surface of the transparent electrode 9 and a reflector 12 of the bottom of the throughhole 2 directly under the cap layer 7 so that laser light 19 is outputted from the bottom of the through hole 2. Here, since the reflector has an area equal to or larger than the side of the active layer reflector while being positioned directly above or down the active region, its luminous near view image takes a circular form corresponding to the active region. |
| 公开日期 | 1989-11-14 |
| 申请日期 | 1988-05-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63966]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | NITTA ATSUSHI. Surface luminous type semiconductor laser device. JP1989282882A. 1989-11-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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