Photoelectronic element
文献类型：专利
| 作者 | KOJIMA KEISUKE; ARANISHI TOSHIO; HISAMA KAZUO |
| 发表日期 | 1987-01-07 |
| 专利号 | JP1987001292A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photoelectronic element |
| 英文摘要 | PURPOSE:To manufacture an optical waveguide and a light-emitting or light-receiving element simultaneously through one-time crystal growth by changing one part of a superlattice layer into a mixed crystal through the diffusion or ion implantation of an impurity and using the mixed crystal as the optical waveguide. CONSTITUTION:One part of a superlattice layer 6 has an optical waveguide layer 7 formed through the diffusion or ion implantation of an impurity. The active layer 6 consists of a superlattice, and discharges photons having approximately the same energy as a lower band gap E1 through current injection. The photons are projected to the optical waveguide layer 7, but the optical waveguide layer 7 is turned previously into a mixed crystal, a band gap E2 is larger than the energy E1 of photons, and beams are hardly absorbed in the optical waveguide layer 7, and are propagated in extremely low loss. Since a coupling section 5 is connected smoothly, loss is reduced extremely. A light-emitting or light-receiving element and the optical waveguide, through which loss therefrom is minimized, can be manufactured through one-time crystal growth for shaping the active layer 6 and an optical confinement layer 8, thus simplifying a process, then improving yield, with the result than at element can be manufactured at low cost. |
| 公开日期 | 1987-01-07 |
| 申请日期 | 1985-06-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63977]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KOJIMA KEISUKE,ARANISHI TOSHIO,HISAMA KAZUO. Photoelectronic element. JP1987001292A. 1987-01-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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