Semiconductor laser with lens
文献类型：专利
| 作者 | AOYANAGI TOSHITAKA; SHIGIHARA KIMIO |
| 发表日期 | 1991-08-20 |
| 专利号 | JP1991190180A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser with lens |
| 英文摘要 | PURPOSE:To easily obtain a semiconductor laser of high performance by a method wherein a groove or a terrace is provided onto a substrate crystal, and a semiconductor lens is formed thereon. CONSTITUTION:A groove 9 is previously formed on a substrate crystal A first clad layer 5, an active layer 6, and a second clad layer 7 are successively formed on the substrate crystal 1, a lens 3 is formed on the groove 9, and a semiconductor laser 2 is formed on a part other than the groove 9, whereby the active layer 6 of the lens 3 can be formed at a level lower than that of the active layer 6 of the semiconductor laser 2. Laser rays 8 emitted from the semiconductor laser 2 are taken outside passing through the second clad layer 7 in the lens 3 without passing through the active layer 6 and can be shaped in beam from without being optically absorbed. A terrace may be pro vided in place of the groove 9, whereby the active layers 6 of the lens 3 and the semiconductor laser 2 are made to deviate from each other in level. |
| 公开日期 | 1991-08-20 |
| 申请日期 | 1989-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63985]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | AOYANAGI TOSHITAKA,SHIGIHARA KIMIO. Semiconductor laser with lens. JP1991190180A. 1991-08-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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