Halbleiterlaservorrichtung und Herstellungsverfahren einer Halbleitervorrichtung
文献类型：专利
| 作者 | KAJIKAWA YASUTOMO; KARAKIDA SHOUICHI; KIZUKI HIROTAKTA; MIHASHI YUTAKA; MIYASHITA MOTOHARU; OHKURA YUJI; YOSHIDA YASUAKI |
| 发表日期 | 1996-06-20 |
| 专利号 | DE19546578A1 |
| 著作权人 | MITSUBISHI DENKI K.K. TOKIO/TOKYO JP |
| 国家 | 德国 |
| 文献子类 | 发明申请 |
| 其他题名 | Halbleiterlaservorrichtung und Herstellungsverfahren einer Halbleitervorrichtung |
| 英文摘要 | A method of fabricating a semiconductor laser device includes successively forming an active layer 3 and upper cladding layers 4, 6 on a lower cladding layer 2, etching away portions except regions of the upper cladding layers 4, 6 where a current flows to form a stripe-shaped ridge structure forming a buffer layer 8 comprising AlxGa1-xAs having an Al composition ratio x of 0 to 0.3 which is grown on surfaces of the upper cladding layers 4, 6 exposed by the etching, and forming a current blocking layer 9 comprising first conductivity type AlyGa1-yAs having an Al composition ratio y of 0.5 or more. Therefore, since the layer 8 comprises AlGaAs having a low Al composition ratio (0 SIMILAR 0.3), three-dimensional growth at the surface of the buffer layer 8 is suppressed, whereby the buffer layer 8 having reduced crystal defects is formed. Accordingly, the AlGaAs current blocking layer 9 also becomes a crystalline layer having reduced crystal defects and good crystalline quality. Consequently, current leakage is suppressed, whereby a laser having a low threshold current and a high efficiency can be fabricated. |
| 公开日期 | 1996-06-20 |
| 申请日期 | 1995-12-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/63991]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI K.K. TOKIO/TOKYO JP |
| 推荐引用方式 GB/T 7714 | KAJIKAWA YASUTOMO,KARAKIDA SHOUICHI,KIZUKI HIROTAKTA,et al. Halbleiterlaservorrichtung und Herstellungsverfahren einer Halbleitervorrichtung. DE19546578A1. 1996-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。