Compound semiconductor laser device
文献类型：专利
| 作者 | OHITSU, YOSHINORI |
| 发表日期 | 2006-10-26 |
| 专利号 | US20060239320A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Compound semiconductor laser device |
| 英文摘要 | A compound semiconductor laser device has a semiconductor substrate of first conduction type and a plurality of layers sequentially formed on the substrate. The plurality of layers include first and second cladding layers of the first conduction type, a third cladding layer of second conduction type, and an active layer between the second and third cladding layers. The second cladding layer has a lower carrier concentration than the first cladding layer. For example, the carrier concentration of the first cladding layer is from 1×1018 cm−3 to 2×1018 cm−3, inclusive, and the carrier concentration of the second cladding layer is from 1×1017 cm−3 to 5×1017 cm−3, inclusive. |
| 公开日期 | 2006-10-26 |
| 申请日期 | 2006-04-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64005]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | OHITSU, YOSHINORI. Compound semiconductor laser device. US20060239320A1. 2006-10-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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