Ridge-waveguide semiconductor laser diode
文献类型：专利
| 作者 | SON, JOONG-KON; JANG, TAE-HOON; SUNG, YOUN-LOON; SAKONG, TAN; PAEK, HO-SUN; LEE, SUNG-NAM |
| 发表日期 | 2006-12-14 |
| 专利号 | US20060280215A1 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Ridge-waveguide semiconductor laser diode |
| 英文摘要 | A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the active layer; and an upper electrode formed on the upper multi-semiconductor layer, wherein the upper electrode covers at least one side surface of the ridge portion. |
| 公开日期 | 2006-12-14 |
| 申请日期 | 2006-08-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64007]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | SON, JOONG-KON,JANG, TAE-HOON,SUNG, YOUN-LOON,et al. Ridge-waveguide semiconductor laser diode. US20060280215A1. 2006-12-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。