Semiconductor device without substrate and manufacture thereof
文献类型：专利
| 作者 | YANASE TOMOO; INAI MOTOHIKO; MITO IKUO; MATSUMOTO TAKU; USUI AKIRA |
| 发表日期 | 1986-07-01 |
| 专利号 | JP1986144015A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device without substrate and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a semiconductor device wherein an epitaxial layer is not stressed by forming the epitaxial layer which has a different latice constant from that of a substrate. CONSTITUTION:An epitaxial layer consisting of three layers, an In0.35Ga0.65Pn- clad layer 11, an In0.2Ga0.8As0.35P0.65 active layer 12 and an In0.35Ga0.65Pp-clad layer 13 formed on a GaAs substrate 10, is separated from a substrate 14 and made a semiconductor device with only epitaxial layers. The lattice constant of the epitaxial layer is 5.60Angstrom and the value is different from that of the GaAs substrate 14 approx. 1%. A semiconductor mixed crystal composition which has such a lattice constant is an In0.2Ga0.8As0.35P0.65 or an In0.35Ga0.65P, the mixed crystal composition is a direct transition type and a laser oscillation at 0.65mum is possible. |
| 公开日期 | 1986-07-01 |
| 申请日期 | 1984-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64011]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YANASE TOMOO,INAI MOTOHIKO,MITO IKUO,et al. Semiconductor device without substrate and manufacture thereof. JP1986144015A. 1986-07-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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