Low voltage multi-junction vertical cavity surface emitting laser
文献类型：专利
| 作者 | CHENG, JULIAN; SHIEH, CHAN-LONG; LIU, GUOLI; MURTY, MEDICHARLA, VENKATA, RAMANA |
| 发表日期 | 2004-06-03 |
| 专利号 | WO2004047242A1 |
| 著作权人 | CHENG, JULIAN |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Low voltage multi-junction vertical cavity surface emitting laser |
| 英文摘要 | An optical device includes a light emitting region (204) which emits light at the wavelength of operation, the light emitting region includes at least one active region (215). An n-type conductivity contact region (216) is positioned on one surface of the active region and a p-type conductivity contact region (218) is positioned on an opposite surface. The p surface of a p/n tunnel junction (202) is positioned on the opposite surface of the p-type conductivity contact region and an n-type conductivity contact region is positioned on the n surface. The light emitting region (204) is positioned within an optical gain cavity which includes a mirror (210) and an opposed mirror (206) and a substrate solder bonded using a bonding layer (214) to at least one of the mirror (210) and the opposed mirror (206). |
| 公开日期 | 2004-06-03 |
| 申请日期 | 2003-11-18 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64015]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CHENG, JULIAN |
| 推荐引用方式 GB/T 7714 | CHENG, JULIAN,SHIEH, CHAN-LONG,LIU, GUOLI,et al. Low voltage multi-junction vertical cavity surface emitting laser. WO2004047242A1. 2004-06-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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